1N4454 vishay semiconductors formerly general semiconductor document number 88110 www.vishay.com 13-may-02 1 small-signal diode reverse voltage 100v forward current 150ma features ?silicon epitaxial planar diode ?fast switching diode mechanical data case: do-35 glass case weight: approx. 0.13g packaging codes/options: f2/10k per ammo tape (52mm), 50k/box f3/10k per 13 reel (52mm tape), 50k/box maximum ratings and thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol limit unit reverse voltage v r 75 v peak reverse voltage v rm 100 v maximum average rectified current half wave rectification i f(av) 150 ma with resistive load at t amb = 25 c and f 50hz (1) surge forward current at t < 1s and t j = 25 ci fsm 500 ma maximum power dissipation at t amb = 25 c (1) p tot 500 mw thermal resistance junction to ambient air (1) r ja 350 c/w maximum junction temperature t j 175 c storage temperature range t s 65 to +175 c electrical characteristics (t a = 25 c unless otherwise noted) parameter symbol min. max. unit maximum forward voltage drop at i f = 10ma v f 1.0 v leakage current at v r = 50v i r 100 na at v r = 75v 5 a reverse breakdown voltage tested with 100 a pulses v (br)r 100 v capacitance at v f = v r = 0v c tot 2pf reverse recovery time t rr 4ns from i f = 10ma to i r = 1ma, v r = 6v, r l = 100 ? rectification efficiency at f = 100mhz, v rf = 2v v 0.45 note: (1) valid provided that leads at a distance of 8mm from case are kept at ambient temperature do-204ah (do-35 glass) dimensions in inches and (millimeters)
1N4454 vishay semiconductors formerly general semiconductor www.vishay.com document number 88110 2 13-may-02 ratings and characteristic curves (t a = 25 c unless otherwise noted) 0 200 400 600 800 1000 admissible power dissipation vs ambient temperature 0 100 200 c 10 2 10 1 1 10 10 2 10 3 ma 01 2v i f v f p tot t amb 1 10 10 3 10 2 10 4 ? r f i f dynamic forward resistance vs forward current 10 2 10 1 11010 2 t j = 25 c f = 1.0 khz ma forward characteristics 0.7 0.8 0.9 1.0 1.1 relative capacitance vs reverse voltage 02 10v v r t j = 25 c f = 1.0mhz 468 c tot (v r ) c tot (0v) t j = 25 c t j = 25 c t j = 100 c mw 1 10 10 2 10 3 10 4 na 0 100 200 c i r t j leakage current vs junction temperature v r = 20v 0.1 1 100 10 a i frm t p admissible repetitive peak forward current vs pulse duration 10 5 10 4 10 3 10 2 10 1 1 10s 0.5 0.2 0.1 n = 0 i frm v = t p /t t = 1/f p t p t t i
|
